Nonlinear Optics in Hydrogenated Amorphous Silicon

Luminescence quenching in erbiumdoped hydrogenated amorphous silicon

Mechanisms of metastability in hydrogenated amorphous silicon

We survey theoretical approaches to understanding the diverse metastable behavior in hydrogenated amorphous silicon. We discuss a recently developed network-rebonding model involving bonding rearrangements of silicon and hydrogen atoms. Using tight-binding molecular dynamics we find non-radiative recombination can break weak silicon bonds with low activation energies, producing dangling bond–fl...

Stable transistors in hydrogenated amorphous silicon

Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band ...

Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides.

We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples. ...

First-principles study of hydrogenated amorphous silicon

K. Jarolimek,1,2 R. A. de Groot,2 G. A. de Wijs,2 and M. Zeman1 1DIMES, Delft University of Technology, Feldmannweg 17, 2600 GB Delft, The Netherlands 2Electronic Structure of Materials, Institute for Molecules and Materials, Faculty of Science, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands Received 23 May 2008; revised manuscript received 9 February 2009; p...